| PART |
Description |
Maker |
| MP6404 |
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| MP4410 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| TLP200D |
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET
|
Toshiba Semiconductor
|
| TLP3111 |
TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET
|
Toshiba Semiconductor
|
| M68732LA 68732LA |
400 MHz - 450 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
From old datasheet system
Silicon MOS FET Power Amplifier, 400-450MHz 7W FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 400-450MHz, 7W, FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-450 MHz 7W FM PORTABLE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| PF08109B |
MOS FET Power Amplifier Module
|
Hitachi
|
| PM45100K |
Silicon N-Channel Power MOS FET Module
|
Renesas Technology
|
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
